?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fjp13009 rev. b fjp13009 high voltage fast-s witching npn power transistor march 2007 fjp13009 high voltage fast-switching npn power transistor ? high voltage capability ? high switching speed ? suitable for electronic ballast and switching mode power supply absolute maximum ratings* t c = 25c unless otherwise noted (notes_1) * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes_1: 1) these ratings are based on a maximum junction temperature of 150 c. 2) these are steady state limits. the factory should be consulte d on applications involving pulsed or low duty cycle operations . package marking and ordering information notes_2 : 1) the affix ?-h2? means th e hfe classification. 2) the suffix ?-tu? means the tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 12 a i cp collector current (pulse) 24 a i b base current 6 a p c collector dissipation (t c = 25 c) 100 w t j junction temperature 150 c t stg storage temperature range -65 ~ 150 c device item (notes_2) device marking package packing method qty(pcs) fjp13009 j13009 to-220 bulk 1,200 fjp13009h2tu j130092 to-220 tube 1,000 FJP13009TU j13009 to-220 tube 1,000 1.base 2.collector 3.emitter 1 to-220
2 www.fairchildsemi.com fjp13009 rev. b fjp13009 high voltage fast-s witching npn power transistor electrical characteristics t c = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% h fe classification symbol parameter conditions min. typ. max units v ceo (sus) collector-emitter sustaining voltage i c = 10ma, i b = 0 400 v i ebo emitter cut-off current v eb = 9v, i c = 0 1 ma h fe * dc current gain v ce = 5v, i c = 5a (h fe1 ) v ce = 5v, i c = 8a 8 6 40 30 v ce (sat) * collector-emitter saturation voltage i c = 5a, i b = 1a i c = 8a, i b = 1.6a i c = 12a, i b = 3a 1 1.5 3 v v v v be (sat) * base-emitter saturation voltage i c = 5a, i b = 1a i c = 8a, i b = 1.6a 1.2 1.6 v v c ob output capacitance v cb = 10v, f = 0.1mhz 180 pf f t current gain bandwidth product v ce = 10v, i c = 0.5a 4 mhz t on turn on time v cc = 125v, i c = 8a i b1 = - i b2 = 1.6a, r l = 15,6 ? 1.1 s t stg storage time 3 s t f fall time 0.7 s classification h1 h2 h fe1 8 ~ 17 15 ~ 28
3 www.fairchildsemi.com fjp13009 rev. b fjp13009 high voltage fast-s witching npn power transistor typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. collector output capacitance figure 4. turn on time figure 5. turn off time figure 6. forward bias safe operating area 0.1 1 10 100 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 i c = 3 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1000 1 10 100 1000 c ob [pf], capacitance v cb [v], collector base voltage 0.1 1 10 100 10 100 1000 10000 v cc =125v i c =5i b t d , v be (off)=5v t r t r , t d [ns], turn on time i c [a], collector current 0.1 1 10 100 100 1000 10000 v cc =125v i c =5i b t f t stg t stg , t f [ns], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 100 10 s 1 00 s 1ms d c i c [a], collector current v ce [v], collector-emitter voltage
4 www.fairchildsemi.com fjp13009 rev. b fjp13009 high voltage fast-s witching npn power transistor typical performance characteristics (continued) figure 7. reverse bias safe operating area figure 8. power derating 10 100 1000 10000 0.01 0.1 1 10 100 vcc=50v, i b1 =1a, i b2 = -1a l = 1mh i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 p c [w], power dissipation t c [ o c], case temperature
5 www.fairchildsemi.com fjp13009 rev. b fjp13009 high voltage fast-s witching npn power transistor mechanical dimensions 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
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